US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor device having nanosheet transistor and methods of fabrication thereof" (Taiwanese Inventors)

Posted On: 2026-10-27

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,682, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device having nan... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Semiconductor device" (South Korean Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,683, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Yang X... Read More

US Patent Issued to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY on Oct. 27 for "Thin film transistor, method for manufacturing the same, and array substrate" (Chinese Inventor)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,684, issued on Oct. 27, was assigned to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY Co. LTD. (Shenzhen, China). "T... Read More

US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on Oct. 27 for "Semiconductor device and manufacturing method thereof" (Chinese Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,685, issued on Oct. 27, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Jiangsu, China). "Semiconductor device and manufacturi... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor structure having both gate-all-around devices and planar devices" (Taiwanese Inventor)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,686, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor structure having both... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 27 for "Method of manufacturing a semiconductor device including patterning a semiconductor substrate to form openings" (Taiwanese Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,687, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of manufacturing a semicondu... Read More

US Patent Issued to NANYA TECHNOLOGY on Oct. 27 for "Semiconductor device with top dielectric layer and method for fabricating the same" (Taiwanese Inventor)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,688, issued on Oct. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with top dielectric layer a... Read More

US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Oct. 27 for "Nanosheet device with nitride isolation structures" (New York Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,689, issued on Oct. 27, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Nanosheet device with nitride isolation stru... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,690, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and manufa... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Semiconductor device including blocking layer and source/drain structure" (South Korean Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,691, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including blocking laye... Read More

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US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor device having nanosheet transistor and methods of fabrication thereof" (Taiwanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Semiconductor device" (South Korean Inventors)

US Patent Issued to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY on Oct. 27 for "Thin film transistor, method for manufacturing the same, and array substrate" (Chinese Inventor)

US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on Oct. 27 for "Semiconductor device and manufacturing method thereof" (Chinese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor structure having both gate-all-around devices and planar devices" (Taiwanese Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 27 for "Method of manufacturing a semiconductor device including patterning a semiconductor substrate to form openings" (Taiwanese Inventors)

US Patent Issued to NANYA TECHNOLOGY on Oct. 27 for "Semiconductor device with top dielectric layer and method for fabricating the same" (Taiwanese Inventor)

US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Oct. 27 for "Nanosheet device with nitride isolation structures" (New York Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Semiconductor device including blocking layer and source/drain structure" (South Korean Inventors)